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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/43MMTMP
Repositorysid.inpe.br/mtc-m21c/2020/12.02.13.20   (restricted access)
Last Update2020:12.02.13.20.56 (UTC) simone
Metadata Repositorysid.inpe.br/mtc-m21c/2020/12.02.13.20.56
Metadata Last Update2022:01.04.01.35.40 (UTC) administrator
DOI10.4028/www.scientific.net/MSF.1012.136
ISSN0255-5476
Citation KeyOkazakiAbraRapp:2020:StCaPb
TitleStudy of caf2-doped pbte thin films grown by molecular beam epitaxy
Year2020
Access Date2024, May 24
Type of Workconference paper
Secondary TypePRE PI
Number of Files1
Size266 KiB
2. Context
Author1 Okazaki, Anderson Kenji
2 Abramof, Eduardo
3 Rappl, Paulo Henrique de Oliveira
Resume Identifier1
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JJ37
Group1 LABAS-COCTE-INPE-MCTIC-GOV-BR
2 LABAS-COCTE-INPE-MCTIC-GOV-BR
3 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 anderson.okazaki@inpe.br
2 eduardo.abramof@inpe.br
3 paulo.rappl@inpe.br
JournalMaterials Science Forum
Volume1012
Pages136-140
Secondary MarkB1_CIÊNCIAS_AMBIENTAIS B1_BIODIVERSIDADE B2_MATERIAIS B2_INTERDISCIPLINAR B2_ENGENHARIAS_III B2_ENGENHARIAS_II B3_ODONTOLOGIA B3_MEDICINA_II B3_MEDICINA_I B3_GEOCIÊNCIAS B3_ENGENHARIAS_I B4_CIÊNCIA_DE_ALIMENTOS B5_ZOOTECNIA_/_RECURSOS_PESQUEIROS B5_QUÍMICA B5_CIÊNCIAS_AGRÁRIAS_I C_ENGENHARIAS_IV C_ASTRONOMIA_/_FÍSICA
History (UTC)2020-12-02 13:20:56 :: simone -> administrator ::
2020-12-02 13:20:58 :: administrator -> simone :: 2020
2020-12-02 13:21:17 :: simone -> administrator :: 2020
2022-01-04 01:35:40 :: administrator -> simone :: 2020
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsLead telluride
calcium fluoride
molecular beam epitaxy
electrical characterization
structural characterization
AbstractWe present here a study on the electrical and structural properties of p-type PbTe films doped with CaF2. The layers were grown by molecular beam epitaxy on freshly cleaved (111) BaF2 substrates. The doping level was monitored by the CaF2 solid source cell temperature (TCaF2), which varied from 500 to 1150 °C. The films with low doping level, TCaF2 ≤ 1010 °C, exhibited flat surfaces with crystalline quality close to the undoped PbTe sample. In contrast, samples with high levels of doping (TCaF2 > 1010 °C) presented CaF2 agglomerates on the surface and a worse crystal quality. The hole density at 77 K versus TCaF2 oscillated between 1.3 × 1017 and 3.6 × 1017 cm-3 and did not exhibit a systematic behavior as the fluoride supply is raised. The results indicate that CaF2 is not an effective p-type dopant for PbTe, due to the abscence of a resonant level close to the valence band or to compensation of extrinsic dopant levels.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Study of caf2-doped...
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4. Conditions of access and use
Languageen
Target Fileokazaki_study.pdf
User Groupsimone
Reader Groupadministrator
simone
Visibilityshown
Archiving Policydenypublisher allowfinaldraft
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item Listsid.inpe.br/bibdigital/2013/09.24.19.30 4
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 3
sid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
DisseminationWEBSCI; PORTALCAPES.
Host Collectionurlib.net/www/2017/11.22.19.04
6. Notes
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